Kentaro Matsuura of Prof.Wakabayashi Lab receives Young Award

Kentaro Matsuura of Prof. Wakabayashi Lab won a Young Award at 19th International Workshop on Junction Technologies (IWJT) 2019, an international conference co-hosted by the Japan Society of Applied Physics, co-hosted by IEEE and EDS.
In this oral presentation, a two-dimensional semiconductor transistor (2D FET) device technology expected for AR displays and high-performance logic LSIs was investigated. Top-gate nMOSFET with a MoS₂ film formed by bottom-up film forming technology as a channel material, realized the world's first to achieve normally-off characteristics. In particular, this technology was realized by using a single-layer Al₂O₃ film as the gate insulating film and a MoSi₂ film as the source / drain contacts, and further developing the process integration technology.

Based on these results, we plan to continue to research for further improving transistor characteristics.